来利国际旗舰厅(中国)官方网站来利国际旗舰厅

Stock Code：002449
Back

SiC discrete device

第三代1


    FEATURES


    • High voltage

• High temperature resistance

• High power density


    PRODUCT PARAMETERS:


Product NameVoltageIDRDS (on) @ Tj = 25°CPackage
NSNM120R040CN1200V60A40mΩTO-247-4L
NSNM120R080CN1200V36A80mΩTO-247-4L
NSNM120R160CN1200V17A160mΩTO-247-3L


Product NameVoltageID @ Tj = 150°CPackage
NSBD120A10CS1200V10ATO-247-2L
SIC SBD 650V650V2-8ADFN 8*8/5*6


    PRODUCT DRAWING:

SiC分立器件3.png


来利国际旗舰厅